| PART |
Description |
Maker |
| MMFT3055E_D ON2223 MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
|
ON Semiconductor
|
| BSS84LT1_D ON0229 ON0228 |
From old datasheet system
P-HANNEL ENHANCEMENT-ODE
|
ON Semi
|
| MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MMFT960T1 MMFT960T1_D ON2232 |
From old datasheet system
N-hannel Enhancement-ode Silicon Gate
MEDIUM POWER TMOS FET 300 mA 60 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| VN2222LL VN2222LL_D ON3010 |
From old datasheet system
N-hannel Enhancement
TMOS FET Transistor
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| VN0300L_D ON3009 VN0300L |
TMOS FET Transistor
From old datasheet system
N-hannel Enhancement
|
Motorola, Inc
ON Semi
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| FCRD3005P8 |
Current Regulating Di ode
|
Formosa MS
|
| SUD25N06-45L |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
N-Channel Enhancement-Mode MOSFETs, Logic Level
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| BUZ101SL BUZ101SLE3045A Q67040-S4012-A2 |
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管（N通道增强模式的逻辑电平雪崩级）
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
SIPMOS ? Power Transistor
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
